Electrical circuit model of ITO/AZO/Ge photodetector
نویسندگان
چکیده
In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.
منابع مشابه
Application of the Kalman-Bucy filter in the stochastic differential equation for the modeling of RL circuit
In this paper, we present an application of the stochastic calculusto the problem of modeling electrical networks. The filtering problem have animportant role in the theory of stochastic differential equations(SDEs). In thisarticle, we present an application of the continuous Kalman-Bucy filter for a RLcircuit. The deterministic model of the circuit is replaced by a stochastic model byadding a ...
متن کاملTransistor - Based Ge / SOI Photodetector for Integrated Silicon
This dissertation describes our effort on developing a technology of photodetectors for application in chip-level optical communication. The photodetector proposed in this thesis work is the Ge/SOI Photo-Hetero-JFET. It is based on a silicon junction-FET in which the traditional electrical gate is replaced by a photo-active germanium mesa. The silicon channel conductance is then modulated by ne...
متن کاملمقاله پژوهشی: مقایسۀ خواص اپتیکی لایه‌های نانوساختار اکسید روی آلاییده با آلومینیوم AZO و اکسید ایندیوم آلاییده با قلع ITO
در این پژوهش، خواص اپتیکی لایهنازک اکسید روی آلاییده با آلومینیوم (AZO) و لایهنازک اکسید ایندیوم آلاییده با قلع (ITO) بر زیرلایۀ شیشه و زیرلایۀ پلیمری انعطافپذیر (پلیاتیلن) PET بررسی شد. سپس فیلترهای فوق با یکدیگر مقایسه شدند. هدف این پژوهش، به دست آوردن لایۀ بهینه با مقاومت ویژۀ کمینه و شفافیت مناسب در ناحیۀ طولموج مرئی است. در لایه‌نشانی‌های AZO و ITO، برای افزایش قابلیت عبور، دو نوع پو...
متن کاملTransistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....
متن کاملNanostructured germanium deposited on heated substrates with enhanced photoelectric properties
Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nano...
متن کامل